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| ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. FEATURES: THREE PHASE BRIDGE MOSFET POWER MODULE 3018 (315) 701-6751 4707 Dey Road Liverpool, N.Y. 13088 Designed for Higher Current, Bottom Side Braking Pin Compatible with MPM3003 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices Interfaces Directly with Most Brushless Motor Drive IC's 55 Volt, 10 Amp P-Channel, 30 Amp N-Channel DESCRIPTION: The MSK 3018 is a three phase bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. Consisting of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors, the MSK 3018 will interface directly with most brushless motor drive IC's without special gate driving requirements. The MSK 3018 uses M.S.Kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3018 is a replacement for the MPM3003 with higher current capability when turning on all the N-Channel FETs for braking. EQUIVALENT SCHEMATIC TYPICAL APPLICATIONS Three Phase Brushless DC Motor Servo Control Disk Drive Spindle Control Fin Actuator Control Az-El Antenna Control 1 PIN-OUT INFORMATION 1 2 3 4 5 6 Source 2,4,6 Gate 2 Gate 1 Drain 1,2 Gate 4 Drain 3,4 12 11 10 9 8 7 Source 1,3,5 Source 1,3,5 Gate 5 Drain 5,6 Gate 6 Gate 3 Rev. A 7/00 ABSOLUTE MAXIMUM RATINGS 55V 20V 30A 14A 40A 20A RTH-JC 2C/W 6C/W ELECTRICAL SPECIFICATIONS Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Threshold Voltage Drain-Source On Resistance 2 5 Drain-Source On Resistance 3 Forward Transconductance N-Channel (Q2,Q4,Q6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Rise Time Fall Time 1 1 1 1 1 1 1 1 1 ID=30A VDS=44V VGS=10V VDD=28V ID=30A RG=2.5 RD=0.93 VGS=0V VDS=25V f=1MHz ID=-10A VDS=-44V VGS=-10V VDD=-28V ID=-10A 1 1 1 RG=13 RD=2.6 VGS=0V VDS=-25V f=1MHz IS=30A VGS=0V (Q2,Q4,Q6) IS=-10A VGS=0V (Q1,Q3,Q5) 1 1 IS=30A di/dt=100A/S (Q2,Q4,Q6) IS=-10A di/dt=100A/S (Q1,Q3,Q5) IS=30A di/dt=100A/S (Q2,Q4,Q6) IS=-10A di/dt=100A/S (Q1,Q3,Q5) 1 Test Conditions 4 VGS=0 ID=0.25mA (All Transistors) VDS=55V VGS=0V (Q2,Q4,Q6) VDS=-55V VGS=0V (Q1,Q3,Q5) VGS=20V VDS=0 (All Transistors) VDS=VGS ID=250A (Q2,Q4,Q6) VDS=VGS ID=250A (Q1,Q3,Q5) VGS=10V ID=10A (Q2,Q4,Q6) VGS=-10V ID=-10A (Q1,Q3,Q5) VGS=10V ID=10A (Q2,Q4,Q6) VGS=10V ID=-10A (Q1,Q3,Q5) VDS=25V ID=10A (Q2,Q4,Q6) VDS=-25V ID=-10A (Q1,Q3,Q5) MSK3018 Min. 55 2.0 -2.0 30 4.2 Typ. 14 62 47 58 3400 830 240 13 55 130 41 620 280 140 1.3 -1.6 120 54 510 110 Max. 25 -25 100 4.5 -4.5 0.04 0.16 0.013 0.10 150 24 55 35 7.9 16 190 82 760 160 Units V A A nA V V S S nC nC nC nS nS nS nS pF pF pF nC nC nC nS nS nS nS pF pF pF V V nS nS nC nC Turn-On Delay Time 1 Turn-Off Delay Time Input Capacitance Output Capacitance P-CHANNEL (Q1,Q3,Q5) Total Gate Charge 1 Gate-Source Charge 1 Gate-Drain Charge 1 Turn-On Delay Time 1 Rise Time Fall Time 1 1 Turn-Off Delay Time Input Capacitance Output Capacitance BODY DIODE Forward On Voltage 1 Reverse Transfer Capacitance Reverse Transfer Capacitance 1 Reverse Recovery Time Reverse Recovery Charge NOTES: 1 2 3 4 5 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. Resistance as seen at package pins. Resistance for die only; use for thermal calculations. TA=25C unless otherwise specified. Rev. A 7/00 2 Test limits due to autotest fixturing constraints. IDM VGS ID MAX MAX MAX MAX MAX MAX VDSS VDGDR Drain to Source Voltage Drain to Gate Voltage (RGS=1M) Gate to Source Voltage (Continuous) Continuous Current (N-Channel) (P-Channel) Pulsed Current (N-Channel) (P-Channel) Thermal Resistance (Junction to Case) (N-Channel FETs) (P-Channel FETs) 55V MAX Single Pulse Avalanche Energy 570mJ (Q2,Q4,Q6) 180mJ (Q1,Q3,Q5) +175C MAX TJ Junction Temperature -55C to +150C TST Storage Temperature Case Operating Temperature Range -55C to +125C TC TLD Lead Temperature Range 300C MAX (10 Seconds) APPLICATION NOTES N-CHANNEL GATES (Q2,Q4,Q6) For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors are on. This will keep the dissipation down to a minimum level [RDS(ON) specified in the data sheet]. How quickly the gate gets turned ON and OFF will determine the dissipation of the transistor while it is transitioning from OFF to ON, and vice-versa. Turning the gate ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise in the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive IC's have sufficient gate drive capability for the MSK 3018. If not, paralleled CMOS standard gates will usually be sufficient. A series resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray inductances in the MOSFET circuit. The selection of the resistor is determined by how fast the MOSFET wants to be switched. See Figure 1 for circuit details. Figure 1 P-CHANNEL GATES (Q1,Q3,Q5) Most everything applies to driving the P-Channel gates as the N-Channel gates. The only difference is that the P-Channel gate to source voltage needs to be negative. Most motor drive IC's are set up with an open collector or drain output for directly interfacing with the P-channel gates. If not, an external common emitter switching transistor configuration (see Figure 2) will turn the PChannel MOSFET on. All the other rules of MOSFET gate drive apply here. For high supply voltages, additional circuitry must be used to protect the P-Channel gate from excessive voltages. Figure 2 BRIDGE DRIVE CONSIDERATIONS It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high side transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called "shoot-through", and it places a momentary short across the power supply. This overly stresses the transistors and causes excessive noise as well. See Figure 3. Figure 3 This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are used for servo systems such as locked antiphase PWM'ing for high bandwidth operation. Rev. A 7/00 3 TYPICAL PERFORMANCE CURVES 4 Rev. A 7/00 MECHANICAL SPECIFICATIONS TORQUE SPECIFICATION 3 TO 5 IN/LBS. TEFLON SCREWS OR WASHERS ARE RECOMMENDED. ALL DIMENSIONS ARE 0.010 INCHES UNLESS OTHERWISE LABELED. ORDERING INFORMATION PART NUMBER SCREENING LEVEL MSK 3018 Industrial 4707 Dey Road, Liverpool, New York 13088 Phone (315) 701-6751 FAX (315) 701-6752 www.mskennedy.com The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make changes to its products or specifications without notice, however, and assumes no liability for the use of its products. M.S. Kennedy Corp. 5 Rev. A 7/00 |
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